New article in the reputable journal Journal of Physics D: Applied Physics
06/29/2020
New article in the reputable journal Journal of Physics D: Applied Physics
A new article "Bipolar resistive switching with unidirectional selector function in nitride / oxide heterostructures" based on the results of joint work of StoLab with colleagues from South Korea and the USA was accepted for publication in the reputable journal Journal of Physics D: Applied Physics (impact factor JCR 2.829).
Within the framework of this work, a number of memristive devices with original versions of a thin-film structure based on a combination of films of hafnium oxide and silicon nitride were manufactured and studied. The most interesting result was obtained for Ni / SiNx / HfO2 / p ++ Si memristive devices with the effect of self-rectification of the current (nonlinear current-voltage characteristic).
As it has been shown, this device eases the problem of leakage currents in a passive memristive crossbar array.
This double layer device provides a much higher current rectification ratio (> 104) in the low resistance state for continuous and pulsed modes compared to two single layer devices based on SiNx and HfO2.
The reduced leakage current for the double layer device can be explained by the high Schottky barrier in the HfO2 layer at negative bias. The modified readout scheme provides a large number of WORD lines (~ 3971) in the cross-bar array structure due to the high rectifying capacity of the double layer device.
The developed dual-layer device with the proposed readout circuit is a good candidate for use in high-density memory devices and neuromorphic applications.