StoLab scientists took part in the preparation of a special issue of the journal «Chaos, Solitons & Fractals»
StoLab scientists took an active participation in the preparation of a special issue of the highly rated journal «Chaos, Solitons & Fractals»
Scientists of the Stochastic Multistable Systems Laboratory, created in accordance with Agreement No. 074-02-2018-330(2) between UNN and the Ministry of Education and Science of the Russian Federation as part of a Megagrant under the guidance of a leading Italian scientist, Professor Bernardo Spagnolo (2018-2022), took an active participation in the preparation of a special issue of the highly rated journal «Chaos, Solitons & Fractals» (impact factor 9.922).
The special issue of «Memristors and Nonequilibrium Stochastic Multistable Systems» (August 2022), among 61 papers (9 papers belong to the laboratory team), for the most part includes extended versions of reports presented at the international conference «New Trends in Nonequilibrium Stochastic Multistable Systems and Memristors (NES2019)», held at the Ettore Majorana Foundation and Centre for Scientific Culture in Erice (Trapani, Sicily, Italy) from 18 to 21 October 2019.
The main objectives of this special issue are to promote new ideas, identify new trends and key innovations in the current and fruitful field of research and development related to memristive effect mechanisms, nanomaterials and memristor technologies for applications in non-volatile resistive memory elements (Resistive Random Access Memory – RRAM), new information and computing systems based on it. Considerable attention is paid to memristive neuromorphic systems, which can provide a significant (by orders of magnitude) increase in performance and energy efficiency when solving complex computational problems. A number of papers are also presented on the analysis of the chaotic behavior of memristors and memristive neural networks, namely, metastable and discontinuous chaos, chaos synchronization, memristive hyperchaotic systems. Another group of articles in the special issue traditionally consisted of theoretical and experimental studies of the dynamics of stochastic resistive switching and the role of external and internal thermal noise sources in memristors. In particular, new results are presented on the experimental observation in memristive systems of such well-known phenomena with a constructive role of noise as stochastic resonance and noise-enhanced stability effect (induced by internal or external noise). These new observations open the way to a deeper understanding of the switching mechanism in memristive systems and, at the same time, to a wide range of applications where noise is used as a control parameter to improve the stability of electronic devices.