RUBTSOV ALEXEY

Main position:

Deputy Director of Engineering Center of Lobachevsky University, Ph.D.

Position in the laboratory:

Senior Researcher

Born on December 17, 1977 in the city of Gorky. In 1995 he graduated from the Physics and Mathematics Lyceum No. 36 with a gold medal. In 1999 he received a bachelor's degree in radiophysics (with honors) and in 2001 a master's degree in radiophysics (with honors) from the radiophysics faculty of UNN. In 2007 he defended his Ph.D. thesis (01.04.03 radiophysics) in the field of statistical radiophysics at UNN. In 2002, he completed an internship at the Advanced Development Department of Intel Corporation, and in 2015, he completed professional training under the Technology Development Program (University of Maryland). , USA). Has a higher education in economics (economics and management, UNN).

18 years of experience in organizing and performing R&D for the world leaders of the high-tech industry (Huawei Technologies, Intel Corporation, Samsung Electronics, LG Electronics, etc.). He is the responsible executor of 3 PNI projects within the framework of the Federal Target Program "Research and Development in Priority Areas of Development of the Scientific and Technological Complex of Russia for 2014-2020" and a number of projects ordered by Russian companies.

He is the author of 12 US patents in the field of ICT.