PAVLOV DMITRY

Main position:

Head of the Department of Semiconductor Physics and Optoelectronics, Faculty of Physics, Doctor of Physical and Mathematical Sciences, Professor

Position in the laboratory:

Leading Researcher

Graduated from FZF UNN in 1983 with a degree in physics of semiconductors and dielectrics. In the same year he was admitted to the post of engineer at the Gorky Scientific Research Instrument-Making Institute (GNIPI).

In 1985 he was an assistant at the Gorky (Nizhny Novgorod) State University), senior lecturer (1991), associate professor (1994), professor (2002), head of the department (2003). Experience of scientific and pedagogical work at UNN - 35 years.

Candidate Phys.-Math. Sciences (1990. Topic of Ph.D. thesis: "The structure and properties of amorphous silicon doped with isovalent impurities".

Doctor Phys.-Math. Sciences (2001) topic of doctoral dissertation: "Structural modification of silicon films in the process of growth and alloying."

At the moment, under the guidance of prof. YES. Pavlova, 7 candidate dissertations were defended, consultant for the preparation of one doctoral dissertation.

Research interests - nanoelectronics, nanophotonics and spintronics of quantum-well heteronanostructures based on silicon, germanium and A3B5 semiconductors, high-resolution transmission electron microscopy, X-ray energy-dispersive spectrometry. Research topics at the moment are the hexagonalization of silicon and germanium, the structure of magnetic semiconductors, the formation of memristor filaments, the creation of semiconductor laser structures not on GaAs substrates, high-resolution electron microscopic analysis of the cross section of quat-sized semiconductor heteronanostructures.

Scientometric indicators: WebofScienceResearcherIDO-4965-2019; author of 409 scientific and educational works.